The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2016
Filed:
Oct. 08, 2015
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Kenji Takeshita, Sunnyvale, CA (US);
Nobuhiro Sakamoto, Tokyo, JP;
Yoshihiro Takenaga, Yokkaichi, JP;
Li-Qun Xia, Cupertino, CA (US);
Mandyam Sriram, San Jose, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/027 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02271 (2013.01); H01L 21/0273 (2013.01); H01L 21/02164 (2013.01); H01L 21/31116 (2013.01); H01L 21/31144 (2013.01);
Abstract
Methods for self-aligned multiple patterning including controlled slimming of features during spacer layer deposition. Multiple spacer layer deposition process conditions produce a balance between controlling the damage to the features and increasing production throughput.
Takeshita, Kenji. (2016). Precise critical dimension control using bilayer ald (U.S. Patent No. 9443716). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9443716
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile