The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 13, 2016

Filed:

Mar. 03, 2015
Applicant:

Hitachi Kokusai Electric Inc., Tokyo, JP;

Inventors:

Katsuhiko Yamamoto, Toyama, JP;

Yuki Taira, Toyama, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 16/455 (2006.01); H01L 21/02 (2006.01); H01L 21/68 (2006.01); H01L 21/285 (2006.01); H01L 21/31 (2006.01); C23C 16/34 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
C23C 16/45551 (2013.01); C23C 16/34 (2013.01); C23C 16/45534 (2013.01); C23C 16/45536 (2013.01); H01J 37/3244 (2013.01); H01J 37/32513 (2013.01); H01J 37/32633 (2013.01); H01J 37/32733 (2013.01); H01J 37/32899 (2013.01); H01L 21/0234 (2013.01); H01L 21/02123 (2013.01); H01L 21/02175 (2013.01); H01L 21/02252 (2013.01); H01L 21/02274 (2013.01); H01L 21/02321 (2013.01); H01L 21/285 (2013.01); H01L 21/28556 (2013.01); H01L 21/31 (2013.01); H01L 21/68 (2013.01);
Abstract

A high quality thin film is formed by forming a layer in which remaining residues are suppressed for each cycle. When a substrate sequentially passes through a first processing region, a second processing region, and a third processing region by rotating a substrate placement unit, a first layer is formed on the substrate while the substrate passes through the first processing region, a second layer is formed by reacting plasma of a reactive gas with the first layer while the substrate passes through the second processing region, and the second layer is modified by plasma of a modifying gas while the substrate passes through the third processing region.


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