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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9437702 B1

PDFFull Text
Date of Patent:
Sep. 06, 2016

Filed:

Jul. 10, 2014

Electronic component manufacturing method and electrode structure

Applicant:

Canon Anelva Corporation, Kawasaki-shi, JP;

Inventors:

Akira Matsuo, Kawasaki, JP;

Yohsuke Shibuya, Kawasaki, JP;

Naomu Kitano, Kawasaki, JP;

Eitaroh Morimoto, Kawasaki, JP;

Koji Yamazaki, Kawasaki, JP;

Yu Sato, Kawasaki, JP;

Takuya Seino, Kawasaki, JP;

Assignee:

CANON ANELVA CORPORATION, Kawasaki-Shi, JP;

Attorney:

Fitzpatrick, Cella, Harper & Scinto

Primary Examiner:

Asok K Sarkar

Int. Cl.
CPC ...
H01L 29/41 (2006.01); H01L 21/28 (2006.01); H01L 21/321 (2006.01); H01L 21/3205 (2006.01); H01L 29/49 (2006.01); C23C 14/35 (2006.01); H01L 21/8238 (2006.01); C23C 14/04 (2006.01); C23C 14/34 (2006.01); C23C 14/58 (2006.01); H01J 37/34 (2006.01); H01L 29/66 (2006.01); H01L 21/285 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4966 (2013.01); C23C 14/046 (2013.01); C23C 14/345 (2013.01); C23C 14/35 (2013.01); C23C 14/586 (2013.01); C23C 14/5826 (2013.01); H01J 37/3402 (2013.01); H01J 37/3447 (2013.01); H01J 37/3452 (2013.01); H01L 21/28088 (2013.01); H01L 21/321 (2013.01); H01L 21/32051 (2013.01); H01L 21/823842 (2013.01); H01L 21/2855 (2013.01); H01L 21/76843 (2013.01); H01L 21/76856 (2013.01); H01L 29/66545 (2013.01);
Abstract

It is an object of the present invention to provide an electronic component manufacturing method, capable of suppressing reduction in a trench opening and suppressing diffusion of a metal film embedded in a trench. An embodiment of the present invention is an electronic component manufacturing method, including the steps of: forming a first electrode constituting layer (e.g., a TiAl film) in a recess (e.g., a trench) formed in a workpiece; forming an ultrathin barrier layer (e.g., a TiAlN film) by forming a nitride layer by plasma-nitriding a surface of the first electrode constituting layer; and forming a second electrode constituting layer (e.g., an Al wiring layer) on the ultrathin barrier layer.

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