The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2016
Filed:
Sep. 07, 2012
Applicants:
Kohei Sasaki, Tokyo, JP;
Masataka Higashiwaki, Tokyo, JP;
Inventors:
Kohei Sasaki, Tokyo, JP;
Masataka Higashiwaki, Tokyo, JP;
Assignees:
TAMURA CORPORATION, Tokyo, JP;
NATIONAI INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/24 (2006.01); H01L 29/78 (2006.01); H01L 29/786 (2006.01); H01L 29/812 (2006.01); H01L 21/02 (2006.01); H01L 29/772 (2006.01); H01L 29/66 (2006.01); H01L 29/04 (2006.01);
U.S. Cl.
CPC ...
H01L 29/24 (2013.01); H01L 21/02414 (2013.01); H01L 21/02433 (2013.01); H01L 21/02565 (2013.01); H01L 21/02576 (2013.01); H01L 21/02581 (2013.01); H01L 21/02631 (2013.01); H01L 29/045 (2013.01); H01L 29/66969 (2013.01); H01L 29/772 (2013.01); H01L 29/78 (2013.01); H01L 29/7816 (2013.01); H01L 29/7824 (2013.01); H01L 29/7869 (2013.01); H01L 29/78603 (2013.01); H01L 29/812 (2013.01); H01L 29/8126 (2013.01);
Abstract
A GaOsemiconductor element includes: an n-type β-GaOsingle crystal film, which is formed on a high-resistance β-GaOsubstrate directly or with other layer therebetween; a source electrode and a drain electrode, which are formed on the n-type β-GaOsingle crystal film; and a gate electrode, which is formed on the n-type β-GaOsingle crystal film between the source electrode and the drain electrode.