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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9437677 B1

PDFFull Text
Date of Patent:
Sep. 06, 2016

Filed:

Sep. 06, 2012

Deposition on a nanowire using atomic layer deposition

Applicants:

Dechao Guo, Wappingers Falls, NY (US);

Zhengwen LI, Danbury, CT (US);

Kejia Wang, Fishkill, NY (US);

Zhen Zhang, Ossining, NY (US);

Yu Zhu, West Harrison, NY (US);

Inventors:

Dechao Guo, Wappingers Falls, NY (US);

Zhengwen Li, Danbury, CT (US);

Kejia Wang, Fishkill, NY (US);

Zhen Zhang, Ossining, NY (US);

Yu Zhu, West Harrison, NY (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorney:

Anthony J. Canale

Primary Examiner:

Raj R Gupta

Int. Cl.
CPC ...
H01L 29/775 (2006.01); B82Y 99/00 (2011.01); H01L 29/06 (2006.01); H01L 21/84 (2006.01); H01L 27/12 (2006.01); H01L 29/47 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); B82Y 30/00 (2011.01); B82Y 40/00 (2011.01); B82Y 10/00 (2011.01); H01L 51/00 (2006.01); H01L 51/05 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0673 (2013.01); B82Y 10/00 (2013.01); B82Y 30/00 (2013.01); B82Y 40/00 (2013.01); H01L 21/845 (2013.01); H01L 27/1211 (2013.01); H01L 29/47 (2013.01); H01L 29/6675 (2013.01); H01L 29/7839 (2013.01); H01L 51/057 (2013.01); H01L 51/0558 (2013.01); H01L 51/0048 (2013.01); H01L 51/0516 (2013.01); Y10S 977/762 (2013.01); Y10S 977/938 (2013.01);
Abstract

A semiconductor device includes a substrate, a nanowire, a first structure, and a second structure. The nanowire is suspended between the first structure and the second structure, where the first structure and the second structure overly the substrate, where the nanowire includes a layer on a surface of the nanowire, where the layer includes at least one of silicide and carbide, where the layer has a substantially uniform shape.

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