The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 06, 2016

Filed:

Jun. 18, 2015
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Jia Zeng, Sunnyvale, CA (US);

Jongwook Kye, Pleasanton, CA (US);

Harry J. Levinson, Saratoga, CA (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 27/02 (2006.01); H01L 21/8234 (2006.01); H01L 21/768 (2006.01); H01L 23/528 (2006.01); H01L 23/522 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0207 (2013.01); H01L 21/76802 (2013.01); H01L 21/76877 (2013.01); H01L 21/76886 (2013.01); H01L 21/823475 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 23/5286 (2013.01); H01L 27/088 (2013.01); H01L 29/66545 (2013.01);
Abstract

A dense library architecture using an M0 hand-shake and the method of forming the layout are disclosed. Embodiments include forming first and second active areas on a substrate, at the top and bottom of a cell, separated from each other; forming first through third gate lines perpendicular to the active areas, where the first and third gate lines are dummy gates at the cell edges; forming trench silicide segments on each of the active areas, between the first, second, and third gate lines; forming first and second M1 metal lines between the first and second gate lines and the second and third gate lines, respectively; forming a M0 segment between the first and second active regions perpendicular to the M1 metal lines; forming a CB between the M0 segment and the second gate line; and forming a V0 from the first metal line to the M0 segment.


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