The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2016
Filed:
Dec. 16, 2013
Globalfoundries Singapore Pte. Ltd., Singapore, SG;
Shunqiang Gong, Singapore, SG;
Juan Boon Tan, Singapore, SG;
Wei Liu, Singapore, SG;
Hai Cong, Singapore, SG;
GLOBALFOUNDRIES Singapore Pte. Ltd., Singapore, SG;
Abstract
Semiconductor device and method of forming a semiconductor device are disclosed. The method includes providing a substrate. A dielectric layer is formed on the substrate. The dielectric layer includes an upper and lower level. The upper level of the dielectric layer is patterned to form at least first and second trench openings and alignment mark openings. One of the first and second trench openings serve as a through via (TV) trench while another trench opening serves as an interconnect trench. A TV opening aligned to the TV trench is formed. The TV opening extends partially into the substrate. A conductive layer is formed over the substrate to fill the trenches and the openings.