The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2016
Filed:
Oct. 15, 2014
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Shan Gao, Maita, NY (US);
Seung Man Choi, Loudonville, NY (US);
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 23/481 (2013.01); H01L 21/76898 (2013.01); H01L 21/7682 (2013.01); H01L 2224/11 (2013.01); H01L 2924/0002 (2013.01);
Abstract
Embodiments of the present invention provide a novel process integration for air gap formation at the sidewalls for a Through Silicon Via (TSV) structure. The sidewall air gap formation scheme for the TSV structure of disclosed embodiments reduces parasitic capacitance and depletion regions in between the substrate silicon and TSV conductor, and serves to also reduce mechanical stress in silicon substrate surrounding the TSV conductor.