The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2016
Filed:
Oct. 25, 2011
Koichi Watanabe, Yokohama, JP;
Yasuo Kohsaka, Yokohama, JP;
Takashi Watanabe, Yokohama, JP;
Takashi Ishigami, Yokohama, JP;
Yukinobu Suzuki, Yokohama, JP;
Naomi Fujioka, Zama, JP;
Koichi Watanabe, Yokohama, JP;
Yasuo Kohsaka, Yokohama, JP;
Takashi Watanabe, Yokohama, JP;
Takashi Ishigami, Yokohama, JP;
Yukinobu Suzuki, Yokohama, JP;
Naomi Fujioka, Zama, JP;
KABUSHIKI KAISHA TOSHIBA, Kawasaki-Shi, JP;
Abstract
A sputtering target contains high purity Nb of which Ta content is 3000 ppm or less and oxygen content is 200 ppm or less. Dispersion of the Ta content in all the sputtering target is within ±30% as a whole target. Dispersion of the oxygen content is within ±80% as a whole target. According to such sputtering target, an interconnection film of low resistivity can be realized. In addition, each grain of Nb in the sputtering target has a grain diameter in the range of 0.1 to 10 times an average grain diameter and ratios of grain sizes of adjacent grains are in the range of 0.1 to 10. According to such sputtering target, giant dust can be largely suppressed from occurring. The sputtering target is suitable for forming a Nb film as liner material of an Al interconnection.