The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2016
Filed:
Jan. 09, 2014
Applicant:
Norihiro Togawa, Nagoya, JP;
Inventor:
Norihiro Togawa, Nagoya, JP;
Assignee:
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/324 (2006.01); H01L 21/04 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 21/324 (2013.01); H01L 21/046 (2013.01); H01L 29/1608 (2013.01);
Abstract
A manufacturing method for a semiconductor device includes introducing an impurity into a SiC substrate, forming a mixed material layer, which is made from a resin and a fibrous carbon material, on a surface of the SiC material into which the impurity is introduced, performing heat treatment of the SiC substrate in which the mixed material layer is formed on the surface of the SiC substrate, and removing the mixed material layer after the heat treatment.