The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 30, 2016

Filed:

Nov. 18, 2014
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Scott E. Sills, Boise, ID (US);

Dan B. Millward, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1266 (2013.01); H01L 45/08 (2013.01); H01L 45/085 (2013.01); H01L 45/1233 (2013.01); H01L 45/141 (2013.01); H01L 45/145 (2013.01); H01L 45/146 (2013.01); H01L 45/1633 (2013.01); H01L 45/1658 (2013.01); H01L 45/1683 (2013.01);
Abstract

A method of forming a semiconductor device structure. The method comprises forming a block copolymer assembly comprising at least two different domains over an electrode. At least one metal precursor is selectively coupled to the block copolymer assembly to form a metal-complexed block copolymer assembly comprising at least one metal-complexed domain and at least one non-metal-complexed domain. The metal-complexed block copolymer assembly is annealed in to form at least one metal structure. Other methods of forming a semiconductor device structures are described. Semiconductor device structures are also described.


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