The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2016
Filed:
Jan. 21, 2014
Tsmc Solar Ltd., Taichung, TW;
Chien Yao Huang, New Tapei, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
Provided is a structure and method for forming CIS-based absorber layers for thin-film solar cells that include three-dimensional compositional profiles. The disclosure provides a patterned absorber layer with two or more different regions, each of the regions having a different concentration profile of one or more components. In some embodiments, the different regions have different respective GGI profiles. GGI represents an atomic ratio of Ga/(Ga+In) in CIS-based absorber materials and in some embodiments the two or more different regions have GGI gradients from top to bottom of the CIS-based absorber layer. The method includes using two evaporation sources in a co-evaporation system to produce the two or more different regions adjacent one another on a substrate.