The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2016
Filed:
Oct. 16, 2014
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Thomas W. Dyer, Pleasant Valley, NY (US);
Haining S. Yang, San Diego, CA (US);
Assignee:
GLOBALFOUNDRIES INC, Grand Cayman, KY;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 29/78 (2006.01); H01L 21/02 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01); H01L 27/092 (2006.01); H01L 29/16 (2006.01); H01L 29/167 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7846 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/02529 (2013.01); H01L 21/02532 (2013.01); H01L 21/02664 (2013.01); H01L 21/823807 (2013.01); H01L 21/823842 (2013.01); H01L 27/092 (2013.01); H01L 29/16 (2013.01); H01L 29/167 (2013.01); H01L 29/4916 (2013.01); H01L 29/6656 (2013.01); H01L 29/7843 (2013.01); H01L 29/7845 (2013.01); H01L 21/8238 (2013.01);
Abstract
Semiconductor devices are provided which have a tensile and/or compressive strain applied thereto and methods of manufacturing. The structure includes a gate stack comprising an oxide layer, a polysilicon layer and sidewalls with adjacent spacers. The structure further includes an epitaxially grown straining material directly on the polysilicon layer and between portions of the sidewalls. The epitaxially grown straining material, in a relaxed state, strains the polysilicon layer.