The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2016
Filed:
Dec. 27, 2015
University of Electronic Science and Technology of China, Chengdu, CN;
Xiaorong Luo, Chengdu, CN;
Jiayun Xiong, Chengdu, CN;
Chao Yang, Chengdu, CN;
Jie Wei, Chengdu, CN;
Junfeng Wu, Chengdu, CN;
Fu Peng, Chengdu, CN;
Bo Zhang, Chengdu, CN;
UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA, Chengdu, CN;
Abstract
An enhancement mode HEMT, including: a substrate layer; a buffer layer; barrier layers; drain electrodes; reverse polarization semiconductor layers; source electrodes; an insulated gate dielectric; and a metal gate electrode The buffer layer is disposed on the substrate layer, and the barrier layers are disposed on the buffer layer. Interfaces between the buffer layer and the barrier layers are provided with first heterojunctions having a two-dimensional electron gas (2DEG) channel. The drain electrodes are disposed at one end of the upper surfaces of the barrier layers and form Ohmic contact with the barrier layers. The reverse polarization semiconductor layers are disposed on the upper surfaces of the barrier layers and are able to produce inversed polarization with the barrier layers. The interfaces between reverse polarization semiconductor layers and barrier layers are provided with second heterojunctions having two-dimensional hole gas (2DHG).