The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2016
Filed:
Dec. 23, 2014
Globalfoundries Inc., Grand Cayman, KY;
Shafaat Ahmed, Newburgh, NY (US);
Murshed M. Chowdhury, Fremont, CA (US);
Aritra Dasgupta, Wappingers Falls, NY (US);
Mohammad Hasanuzzaman, Beacon, NY (US);
Shahrukh Akbar Khan, Danbury, CT (US);
Joyeeta Nag, Wappingers Falls, NY (US);
GlobalFoundries, Inc., Grand Cayman, KY;
Abstract
A method of forming a finFET structure having an ion implanted intermediate region next to the channel region of a finFET gate. The intermediate region is formed in a manner to reduce or eliminate migration of the dopant to undoped regions of the finFET thus forming abrupt finFET junction.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile