The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 30, 2016

Filed:

Apr. 22, 2015
Applicant:

Macronix International Co., Ltd., Hsinchu, TW;

Inventors:

Erh-Kun Lai, Taichung, TW;

Yen-Hao Shih, New Taipei, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/115 (2006.01); H01L 21/28 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 21/02636 (2013.01); H01L 21/28282 (2013.01);
Abstract

A semiconductor structure and a method for manufacturing the same are provided. The semiconductor structure comprises a substrate, a plurality of stacks, a plurality of memory layers, a plurality of channel layers and a plurality of connecting portions. The stacks are disposed on the substrate. Each of the stacks comprises alternately-stacked conductive layers and insulating layers. The memory layers are disposed on sidewalls of the stacks, respectively. The channel layers are disposed on the memory layers, respectively, wherein each of the channel layers comprises a surface being exposed. The connecting portions connect the surface of each of the channel layers to the substrate, respectively.


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