The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2016
Filed:
May. 28, 2015
Macronix International Co., Ltd., Hsinchu, TW;
Ting-Feng Liao, Hsinchu, TW;
Yao-Fu Chan, Hsinchu, TW;
MACRONIX International Co., Ltd., Hsinchu, TW;
Abstract
A semiconductor device and a method of forming the same are provided. At least two separated stacked structures and at least two hard mask patterns respectively on the stacked structures are formed on a substrate. A patterned mask layer is formed on the substrate. The patterned mask layer has an opening which exposes a portion of top surfaces of the hard mask patterns and a portion of the substrate between the stacked structures. The exposed portion of the substrate is removed by using the patterned mask layer and the hard mask patterns as a mask, so as to form a trench in the substrate. An ion implantation process is performed by using the patterned mask layer and the hard mask patterns as a mask, so as to form a doped region in the substrate around the trench.