The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 30, 2016

Filed:

Jul. 30, 2014
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Hsi-Yu Kuo, Hsin-Chu, TW;

Ko-Yi Lee, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/761 (2006.01); H01L 23/60 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H01L 23/60 (2013.01); H01L 21/761 (2013.01); H01L 27/0259 (2013.01); H01L 2924/0002 (2013.01);
Abstract

Semiconductor devices and methods of manufacture thereof are disclosed. In some embodiments, a semiconductor device includes: a substrate; a first region over the substrate, the first region comprising a first n type material; a second region over the substrate and laterally adjacent to the first region, the second region comprising a first p type material; a third region disposed within the second region and laterally separated from the first region, the third region comprising a second n type material; a fourth region disposed atop the third region, the fourth region comprising a second p type material; a fifth region disposed within the first region and laterally separated from the second region, the fifth region comprising a third p type material; and a sixth region disposed atop the fifth region, the sixth region comprising a third n type material.


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