Critical size compensating method of deep groove etching process

Abstract

A critical dimension compensating method of a deep trench etching process includes: obtaining an etching critical dimension difference; compensating an masking layer layout for wafer etching according to a distance between an etching position and the center position of the wafer, and the etching critical dimension difference; and performing a deep trench etching to the wafer according to the compensated masking layer layout. The dimension of the etching patterns of the masking layer layout is compensated by using half of the critical dimension difference as the compensation value, such that the etch rate difference and the etching dimension difference caused by uneven distribution of the critical dimension at different wafer locations during the deep trench etching process are improved, thus greatly improving the uniformity of the critical dimension of the deep trench etching structure.