The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2016
Filed:
Jul. 26, 2015
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Chiu-Te Lee, Hsinchu County, TW;
Ke-Feng Lin, Taipei, TW;
Nien-Chung Li, Hsinchu, TW;
Ching-Nan Hwang, Taichung, TW;
Shih-Teng Huang, Taichung, TW;
Ming-Yen Liu, Hsinchu, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/225 (2006.01); H01L 21/311 (2006.01); H01L 21/283 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/167 (2006.01); H01L 29/49 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02238 (2013.01); H01L 21/02255 (2013.01); H01L 21/2253 (2013.01); H01L 21/283 (2013.01); H01L 21/31111 (2013.01); H01L 29/0653 (2013.01); H01L 29/167 (2013.01); H01L 29/4236 (2013.01); H01L 29/495 (2013.01); H01L 29/66545 (2013.01); H01L 29/78 (2013.01);
Abstract
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a doped region in the substrate; forming a thermal oxide layer on the substrate and the doped region; removing the thermal oxide layer to form a first recess; forming an epitaxial layer on the substrate and in the first recess; and forming a gate dielectric layer in the epitaxial layer.