The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 23, 2016

Filed:

Dec. 20, 2013
Applicant:

Mitsubishi Materials Corporation, Tokyo, JP;

Inventors:

Touyou Ohashi, Kitamoto, JP;

Yoshiyuki Nagatomo, Saitama, JP;

Toshiyuki Nagase, Gotenba, JP;

Yoshirou Kuromitsu, Saitama, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H05K 7/02 (2006.01); B23K 35/26 (2006.01); C22C 13/00 (2006.01); H01L 21/52 (2006.01); H01L 23/373 (2006.01); H01L 23/473 (2006.01); H01L 23/488 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H05K 7/02 (2013.01); B23K 35/26 (2013.01); C22C 13/00 (2013.01); H01L 21/52 (2013.01); H01L 23/3735 (2013.01); H01L 23/473 (2013.01); H01L 23/488 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 23/3107 (2013.01); H01L 2224/29005 (2013.01); H01L 2224/29111 (2013.01); H01L 2224/32238 (2013.01); H01L 2224/32503 (2013.01); H01L 2224/32507 (2013.01); H01L 2224/83447 (2013.01); H01L 2224/83801 (2013.01); H01L 2924/01322 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/3512 (2013.01);
Abstract

In a power module according to the present invention, a copper layer composed of copper or a copper alloy is provided at a surface of a circuit layer onto which a semiconductor element is bonded, and a solder layer formed by using a solder material is formed between the circuit layer and the semiconductor element. An alloy layer containing Sn as a main component, 0.5% by mass or more and 10% by mass or less of Ni, and 30% by mass or more and 40% by mass or less of Cu is formed at the interface between the solder layer and the circuit layer, the thickness of the alloy layer is set to be within a range of 2 μm or more and 20 μm or less, and a thermal resistance increase rate is less than 10% after loading a power cycles 100,000 times under a condition where an energization time is 5 seconds and a temperature difference is 80° C. in a power cycle test.


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