The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 23, 2016

Filed:

Aug. 12, 2015
Applicant:

Asml Netherlands B.v., Veldhoven, NL;

Inventors:

Daniel Jason Riggs, San Diego, CA (US);

Robert Jay Rafac, Encinitas, CA (US);

Assignee:

ASML Netherlands B.V., Veldhoven, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H05G 2/00 (2006.01); B05B 12/02 (2006.01); B05B 17/06 (2006.01);
U.S. Cl.
CPC ...
H05G 2/008 (2013.01); H05G 2/003 (2013.01);
Abstract

Methods and systems for improved timing of a source laser in a laser produced plasma (LPP) extreme ultraviolet (EUV) generation system are disclosed. Due to forces within the plasma chamber, a velocity of a droplet can slow as it approaches the irradiation site. Because the droplet is slowed, a source laser fires prematurely relative to the slowed droplet, resulting in only a leading portion of the droplet being irradiated. The resulting amount of EUV energy generated from the droplet is proportional to the slowed velocity of the droplet. To compensate, the firing of the source laser is delayed for a next droplet based on the generated EUV energy. Because the firing of the source laser is delayed for the next droplet, the next droplet is more likely to be in position to be more completely irradiated, resulting in more EUV energy being generated from the next droplet.


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