The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2016
Filed:
Feb. 11, 2014
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Shang-Fu Yeh, Hsin Chu, TW;
Kuo-Yu Chou, Hsinchu, TW;
Yi-Che Chen, Taichung, TW;
Wei Lun Tao, Hsinchu, TW;
Honyih Tu, Hsinchu, TW;
Calvin Yi-Ping Chao, Zhubei, TW;
Fu-Lung Hsueh, Kaohsiung, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A method for noise simulation of a CMOS image sensor comprises performing a frequency domain noise simulation for a readout circuit of the CMOS image sensor using a computer, wherein the readout circuit includes a correlated double sampling (CDS) circuit, wherein the frequency domain noise simulation includes a CDS transfer function to refer a noise introduced by the CDS circuit back to an input node of the readout circuit. The method further comprises calculating noise at the input node of the readout circuit based on the referred back noises caused by one or more components in the readout circuit and estimating noise of the CMOS imaging sensor by comparing the calculated noise at the input node of the readout circuit to an original input signal to the readout circuit of the CMOS imaging sensor.