The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2016
Filed:
Dec. 23, 2013
Intermolecular Inc., San Jose, CA (US);
Frank Greer, Pasadena, CA (US);
Andy Steinbach, San Jose, CA (US);
Intermolecular, Inc., San Jose, CA (US);
Abstract
In a 'window-junction' formation process for Josephson junction fabrication, a spacer dielectric is formed over the first superconducting electrode layer, then an opening (the 'window' is formed to expose the part of the electrode layer to be used for the junction. In an atomic layer deposition (ALD) chamber (or multi-chamber sealed system) equipped with direct or remote plasma capability, the exposed part of the electrode is sputter-etched with Ar, H, or a combination to remove native oxides, etch residues, and other contaminants. Optionally, an Oor Opre-clean may precede the sputter etch. When the electrode is clean, the tunnel barrier layer is deposited by ALD in-situ without further oxidant exposure.