The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2016
Filed:
Aug. 27, 2009
Yang Gao, San Jose, CA (US);
Kyle Terrill, Santa Clara, CA (US);
Deva Pattanayak, Saratoga, CA (US);
Kuo-in Chen, Los Altos, CA (US);
The-tu Chau, San Jose, CA (US);
Sharon Shi, San Jose, CA (US);
Qufei Chen, San Jose, CA (US);
Yang Gao, San Jose, CA (US);
Kyle Terrill, Santa Clara, CA (US);
Deva Pattanayak, Saratoga, CA (US);
Kuo-In Chen, Los Altos, CA (US);
The-Tu Chau, San Jose, CA (US);
Sharon Shi, San Jose, CA (US);
Qufei Chen, San Jose, CA (US);
Vishay-Siliconix, Santa Clara, CA (US);
Abstract
In a super junction trench power MOSFET (metal oxide semiconductor field effect transistor) device, a column of p-type dopant in the super junction is separated from a first column of n-type dopant by a first column of oxide and from a second column of n-type dopant by a second column of oxide. In an n-channel device, a gate element for the FET is advantageously situated over the column of p-type dopant; and in a p-channel device, a gate element for the FET is advantageously situated over the column of n-type dopant.