The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2016
Filed:
Dec. 30, 2014
Applicants:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
National Taiwan University, Taipei, TW;
Inventors:
Hung-Chih Chang, Taichung, TW;
Pin-Shiang Chen, Taipei, TW;
Chee-Wee Liu, Taipei, TW;
Samuel C. Pan, Hsin-Chu, TW;
Assignees:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin Chu, TW;
National Taiwan University, Taipei, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/04 (2006.01); H01L 29/16 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/045 (2013.01); H01L 29/16 (2013.01); H01L 29/785 (2013.01); H01L 29/7827 (2013.01); H01L 29/7831 (2013.01);
Abstract
A device includes a source region, a drain region, and a wurtzite semiconductor between the source region and the drain region. A source-drain direction is parallel to a [01-10] direction or a [−2110] direction of the wurtzite semiconductor. The device further includes a gate dielectric over the wurtzite semiconductor, and a gate electrode over the gate dielectric.