The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2016
Filed:
May. 29, 2014
Dong-kyu Lee, Suwon-si, KR;
Jae-hwan Lee, Suwon-si, KR;
Tae-yong Kwon, Suwon-si, KR;
Sang-su Kim, Yongin-si, KR;
Jung-dal Choi, Hwaseong-si, KR;
Dong-Kyu Lee, Suwon-si, KR;
Jae-Hwan Lee, Suwon-si, KR;
Tae-Yong Kwon, Suwon-si, KR;
Sang-Su Kim, Yongin-si, KR;
Jung-Dal Choi, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A semiconductor device includes a substrate, a strain-relaxed buffer layer on the substrate, at least one well in the strain-relaxed buffer layer, a first channel layer on the strain-relaxed buffer layer, and a second channel layer on the well. A lattice constant of material constituting the first well is less than a lattice constant of the material constituting the strain-relaxed buffer layer, but a lattice constant of material constituting the second well is greater than the lattice constant of the material constituting the strain-relaxed buffer layer.