The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2016
Filed:
Apr. 29, 2015
Globalfoundries Inc., Grand Cayman, KY;
Guillaume Bouche, Albany, NY (US);
Andy Wei, Queensbury, NY (US);
Sudharshanan Raghunathan, Mechanicville, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
A method of lithographically cutting a Mx line before the Mx line is lithographically defined by patterning and the resulting 2DSAV device are provided. Embodiments include forming an a-Si dummy metal layer over a SiOlayer; forming a first softmask stack over the a-Si dummy metal layer; patterning a plurality of vias through the first softmask stack down to the SiOlayer; removing the first soft mask stack; forming first and second etch stop layers over the a-Si dummy metal layer, the first etch stop layer formed in the plurality of vias; forming a-Si mandrels on the second etch stop layer; forming oxide spacers on opposite sides of each a-Si mandrel; removing the a-Si mandrels; forming a-Si dummy metal lines in the a-Si dummy metal layer below the oxide spacers; and forming a SiOC layer between the a-Si dummy metal lines.