The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2016
Filed:
Oct. 17, 2013
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/12 (2006.01); H01L 21/768 (2006.01); H01L 21/02 (2006.01); H01L 23/31 (2006.01); H01L 21/311 (2006.01); H01L 21/683 (2006.01); H01L 23/29 (2006.01);
U.S. Cl.
CPC ...
H01L 21/768 (2013.01); H01L 21/0209 (2013.01); H01L 21/02071 (2013.01); H01L 21/31116 (2013.01); H01L 21/6831 (2013.01); H01L 23/3171 (2013.01); H01L 23/291 (2013.01); H01L 2924/0002 (2013.01);
Abstract
Embodiments of mechanisms of forming a semiconductor device structure are provided. The semiconductor device structure is provided. The semiconductor device structure includes a substrate having a front side and a back side. The semiconductor device structure also includes devices formed on the front side of the substrate and interconnect structures formed on the devices. The semiconductor device structure further includes a protection layer formed on the back side of the substrate, and the protection layer has a thickness over about 10 A.