The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 23, 2016

Filed:

Sep. 17, 2013
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Tomoyuki Obu, Nirasaki, JP;

Masaki Kurokawa, Nirasaki, JP;

Hiroki Iriuda, Nirasaki, JP;

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/30 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/022 (2013.01); C23C 16/308 (2013.01); C23C 16/401 (2013.01); C23C 16/45523 (2013.01); C23C 16/45557 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/02211 (2013.01); H01L 21/02271 (2013.01); H01L 21/31111 (2013.01);
Abstract

A method of forming a laminated film includes forming a silicon oxide film on a plurality of target objects loaded in a reaction chamber, and forming a silicon oxynitride film on the plurality of target objects by supplying a silicon source, an oxidizing agent and a nitride agent to the reaction chamber, wherein forming the silicon oxide film and forming the silicon oxynitride film are repeatedly performed for a predetermined number of times on the plurality of target objects to form a laminated film including the silicon oxynitride film and the silicon oxide film.


Find Patent Forward Citations

Loading…