The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2016
Filed:
Feb. 17, 2014
Applicant:
Siemens Aktiengesellschaft, Munich, DE;
Inventors:
Assignee:
SIEMENS AKTIENGESELLSCHAFT, Munich, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B01D 69/10 (2006.01); B01D 67/00 (2006.01); B01D 39/16 (2006.01); B01D 61/14 (2006.01); B01D 69/02 (2006.01); G03F 7/16 (2006.01); G03F 7/20 (2006.01); G03F 7/32 (2006.01);
U.S. Cl.
CPC ...
B01D 67/0034 (2013.01); B01D 39/1692 (2013.01); B01D 61/14 (2013.01); B01D 69/02 (2013.01); G03F 7/16 (2013.01); G03F 7/20 (2013.01); G03F 7/32 (2013.01); B01D 2323/34 (2013.01); B01D 2325/02 (2013.01);
Abstract
A method produces a microscreen by providing a support and applying a photoresist layer with a definable thickness to the support. The photoresist is exposed by radiation using a mask that defines the structure of the microscreen. The photoresist is then developed. The thickness of the photoresist layer is selected such that, in a sub-region of the photoresist layer, the radiation used for the exposure penetrates only so slightly that practically no cross-linking of the photoresist takes place.