The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 16, 2016

Filed:

Jul. 27, 2014
Applicant:

Semileds Optoelectronics Co., Ltd., Chu-Nan, TW;

Inventor:

Yi-Feng Fu Shih, Chu-Nan, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 33/62 (2010.01); H01L 33/06 (2010.01); H01L 33/60 (2010.01); H01L 33/38 (2010.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
H01L 33/62 (2013.01); H01L 33/005 (2013.01); H01L 33/06 (2013.01); H01L 33/38 (2013.01); H01L 33/60 (2013.01);
Abstract

A light emitting diode (LED) die includes a first-type semiconductor layer, a multiple quantum well (MQW) layer in electrical contact with the first-type semiconductor layer configured to emit electromagnetic radiation, and a second-type semiconductor layer in electrical contact with the multiple quantum well (MQW) layer. The light emitting diode (LED) die also includes a first pad in electrical contact with the first-type semiconductor layer, and a second pad in electrical contact with the second type semiconductor layer. The light emitting diode (LED) die also includes a strap layer having conductive straps and contact areas located in trenches in the first-type semiconductor layer.


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