The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 16, 2016

Filed:

Dec. 01, 2011
Applicants:

Ralf Jonczyk, Concord, MA (US);

Emanuel M. Sachs, Newton, MA (US);

Inventors:

Ralf Jonczyk, Concord, MA (US);

Emanuel M. Sachs, Newton, MA (US);

Assignee:

1366 Technologies, Inc., Bedford, MA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B 29/06 (2006.01); C30B 28/10 (2006.01); H01L 21/20 (2006.01); C30B 11/00 (2006.01); H01L 31/18 (2006.01); H01L 21/02 (2006.01); C04B 41/50 (2006.01); C04B 41/45 (2006.01); C30B 15/00 (2006.01); C30B 15/32 (2006.01); C30B 21/06 (2006.01);
U.S. Cl.
CPC ...
H01L 31/182 (2013.01); C04B 41/4539 (2013.01); C04B 41/5096 (2013.01); C30B 11/002 (2013.01); C30B 29/06 (2013.01); H01L 21/02002 (2013.01); H01L 21/02532 (2013.01); H01L 31/1804 (2013.01); C30B 15/00 (2013.01); C30B 15/007 (2013.01); C30B 15/32 (2013.01); Y02E 10/546 (2013.01); Y02P 70/521 (2015.11);
Abstract

An interposer sheet can be used for making semiconductor bodies, such as of silicon, such as for solar cell use. It is free-standing, very thin, flexible, porous and able to withstand the chemical and thermal environment of molten semiconductor without degradation. It is typically of a ceramic material, such as silica, silicon nitride, silicon oxynitride, silicon oxycarbide, silicon carbide, silicon carbonitride, silicon oxycarbonitride and others. It is provided between a forming surface of a mold sheet, and the molten material from which a semiconductor body will be formed. It may be secured to the forming surface or deposited upon the melt. The interposer sheet suppresses grain nucleation, and limits heat flow from the melt. It promotes separation of the semiconductor body from the forming surface. It can be fabricated before its use. Because free-standing and not adhered to the forming surface, problems of mismatch of CTE are minimized. The interposer sheet and semiconductor body are free to expand and contract relatively independently of the forming surface.


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