The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2016
Filed:
Nov. 06, 2013
Hamamatsu Photonics K.k., Hamamatsu-shi, Shizuoka, JP;
Akira Sakamoto, Hamamatsu, JP;
Takashi Iida, Hamamatsu, JP;
Koei Yamamoto, Hamamatsu, JP;
Kazuhisa Yamamura, Hamamatsu, JP;
Terumasa Nagano, Hamamatsu, JP;
HAMAMATSU PHOTONICS K.K., Hamamatsu-shi, Shizuoka, JP;
Abstract
Prepared is an ntype semiconductor substratehaving a first principal surfaceand a second principal surfaceopposed to each other, and having a ptype semiconductor regionformed on the first principal surfaceside. At least a region opposed to the ptype semiconductor regionin the second principal surfaceof the ntype semiconductor substrateis irradiated with a pulsed laser beam to form an irregular asperity. After formation of the irregular asperity, an accumulation layerwith an impurity concentration higher than that of the ntype semiconductor substrateis formed on the second principal surfaceside of the ntype semiconductor substrate. After formation of the accumulation layer, the ntype semiconductor substrateis subjected to a thermal treatment.