The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2016
Filed:
Oct. 21, 2009
Applicants:
Yang Gao, San Jose, CA (US);
Kuo-in Chen, Los Altos, CA (US);
Kyle Terrill, Santa Clara, CA (US);
Sharon Shi, San Jose, CA (US);
Inventors:
Yang Gao, San Jose, CA (US);
Kuo-In Chen, Los Altos, CA (US);
Kyle Terrill, Santa Clara, CA (US);
Sharon Shi, San Jose, CA (US);
Assignee:
Vishay-Siliconix, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7813 (2013.01); H01L 29/407 (2013.01); H01L 29/66727 (2013.01); H01L 29/66734 (2013.01); H01L 29/7811 (2013.01); H01L 29/0615 (2013.01); H01L 29/0623 (2013.01); H01L 29/0696 (2013.01);
Abstract
A split gate semiconductor device includes a trench gate having a first electrode region and a second electrode region that are separated from each other by a gate oxide layer and an adjacent dielectric layer. The boundary of the gate oxide layer and the dielectric layer is curved to avoid a sharp corner where the gate oxide layer meets the sidewalls of the trench.