The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2016
Filed:
Nov. 03, 2015
Ixys Corporation, Milpitas, CA (US);
Vladimir Tsukanov, Los Altos Hills, CA (US);
IXYS Corporation, Milpitas, CA (US);
Abstract
A trench IGBT has a gate electrode disposed in a trench. A tub-shaped floating P-well is disposed on one side of the trench. The tub-shaped floating P-well has a central shallower portion and a peripheral deeper portion. An inner sidewall of the trench is semiconductor material of the peripheral deeper portion of the floating P-well. On the other side of the trench is a P type body region involving a plurality of deeper portions and a plurality of shallower portions. Each deeper portion extends to the trench such that some parts of the outer sidewall of the trench are semiconductor material of these deeper P-body portions. Other parts of the outer sidewall of the trench are semiconductor material of the shallower P-body portions. A shallow N+ emitter region is disposed at the top of the outer sidewall. The IGBT has fast turn off and enhanced on state conductivity modulation.