The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2016
Filed:
Dec. 17, 2012
Applicant:
Institute of Microelectronics, Chinese Academy of Sciences, Beijing, CN;
Inventors:
Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/265 (2006.01); H01L 21/306 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/3105 (2006.01); H01L 21/321 (2006.01); H01L 29/10 (2006.01); H01L 29/16 (2006.01); H01L 29/165 (2006.01);
U.S. Cl.
CPC ...
H01L 29/6681 (2013.01); H01L 21/265 (2013.01); H01L 21/30604 (2013.01); H01L 21/31053 (2013.01); H01L 21/32115 (2013.01); H01L 29/1083 (2013.01); H01L 29/16 (2013.01); H01L 29/6656 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01); H01L 29/165 (2013.01); H01L 29/7848 (2013.01);
Abstract
A method for manufacturing a fin structure is provided. A method according to an embodiment may include: forming a patterned pattern transfer layer on a substrate; forming a first spacer on sidewalls of the pattern transfer layer; forming a second spacer on sidewalls of the first spacer; selectively removing the pattern transfer layer and the first spacer; and patterning the substrate with the second spacer as a mask, so as to form an initial fin.