The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2016
Filed:
Sep. 04, 2015
Applicants:
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Inventor:
Fumitake Mieno, Shanghai, CN;
Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/02 (2006.01); H01L 27/24 (2006.01); H01L 45/00 (2006.01); H01L 29/49 (2006.01); G11C 13/00 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 27/2463 (2013.01); H01L 45/1233 (2013.01); H01L 45/1253 (2013.01); H01L 45/146 (2013.01); H01L 45/147 (2013.01); H01L 45/1616 (2013.01); G11C 13/0002 (2013.01); G11C 13/0004 (2013.01); G11C 2213/31 (2013.01); H01L 29/4966 (2013.01); H01L 29/517 (2013.01);
Abstract
A resistive memory storage device includes a lower electrode, an upper electrode and a plurality of composite material layers disposed between the lower electrode and the upper electrode. Each composite material layer includes a first layer and a second layer. The first layer is a metal-based high-K dielectric material layer having a first metal element, and the second layer is a metal layer having the first metal element.