The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2016
Filed:
Apr. 17, 2014
Omnivision Technologies, Inc., Santa Clara, CA (US);
Dajiang Yang, San Jose, CA (US);
Gang Chen, San Jose, CA (US);
Zhenhong Fu, San Jose, CA (US);
Duli Mao, Sunnyvale, CA (US);
Eric A. G. Webster, Mountain View, CA (US);
Sing-Chung Hu, San Jose, CA (US);
Dyson H. Tai, San Jose, CA (US);
OmniVision Technologies, Inc., Santa Clara, CA (US);
Abstract
A pixel cell includes a storage transistor disposed in a semiconductor substrate. The storage transistor includes a storage gate disposed over the semiconductor substrate, and a storage gate implant that is annealed and has a gradient profile in the semiconductor substrate under the storage transistor gate to store image charge accumulated by a photodiode disposed in the semiconductor substrate. A transfer transistor is disposed in the semiconductor substrate and is coupled between the photodiode and an input of the storage transistor to selectively transfer the image charge from the photodiode to the storage transistor. The transfer transistor includes a transfer gate disposed over the semiconductor substrate. An output transistor is coupled to an output of the storage transistor to selectively transfer the image charge from the storage transistor to a read out node. The output transistor includes an output gate disposed over the semiconductor substrate.