The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 16, 2016

Filed:

Oct. 28, 2014
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Chih-Ta Wu, Hsin-Chu, TW;

Jason Lee, Jhubei City, TW;

Chung Chien Wang, Shanhua Township, TW;

Hsing-Lien Lin, Hsin-Chu, TW;

Yu-Jen Wang, Kaohsiung City, TW;

Yeur-Luen Tu, Taichung, TW;

Chern-Yow Hsu, Chu-Bei City, TW;

Yuan-Hung Liu, Hsin-Chu, TW;

Chi-Hsin Lo, Zhubei City, TW;

Chia-Shiung Tsai, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 21/8244 (2006.01); H01L 27/108 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10814 (2013.01); H01L 27/10852 (2013.01); H01L 28/40 (2013.01); H01L 28/75 (2013.01);
Abstract

A capacitor and methods for forming the same are provided. The method includes forming a bottom electrode; treating the bottom electrode in an oxygen-containing environment to convert a top layer of the bottom electrode into a buffer layer; forming an insulating layer on the buffer layer; and forming a top electrode over the insulating layer.


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