The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2016
Filed:
Nov. 04, 2014
Macronix International Co., Ltd., Hsinchu, TW;
Hsin-Liang Chen, Hsinchu, TW;
Ying-Chieh Tsai, Chiayi, TW;
Wing-Chor Chan, Hsinchu, TW;
Shyi-Yuan Wu, Hsin-Chu, TW;
Macronix International Co., Ltd., Hsinchu, TW;
Abstract
A semiconductor device formed in a substrate, including a first region, a second region formed over the first region, a third region, a fourth region formed over the third region, and a fifth region formed over the first region and contacting the second region. The first, second, and fourth regions have a first-type conductivity, and constitute drain region, drain electrode, and source region of a metal-on-semiconductor (MOS) structure. The second region has a higher doping level than the first region. The third region has a second-type conductivity and constitutes channel and body regions of the MOS structure. The fifth region has the second-type conductivity and constitutes an emitter region of a bipolar junction (BJ) structure. The second and third regions constitute base and collector regions of the BJ structure.