The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2016
Filed:
Nov. 12, 2014
Applicant:
Macronix International Co., Ltd., Hsinchu, TW;
Inventors:
Ming-Tsung Wu, Zhubei, TW;
Shih-Ping Hong, Taichung, TW;
Assignee:
Macronix International Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01); H01L 23/535 (2006.01); H01L 27/115 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 23/535 (2013.01); H01L 21/76895 (2013.01); H01L 27/1157 (2013.01); H01L 27/11524 (2013.01); H01L 27/11548 (2013.01); H01L 27/11551 (2013.01); H01L 27/11556 (2013.01); H01L 27/11575 (2013.01); H01L 27/11578 (2013.01); H01L 27/11582 (2013.01);
Abstract
A NAND-based non-volatile memory contact structure includes a trench located adjacent to layered alternating conducting and insulating layers, the layers lining sides and bottom of the trench. A portion of the trench is removed to expose a surface in which electrical connections to the conducting layers are provided on one level.