The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 16, 2016

Filed:

May. 21, 2013
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventor:

Tomoki Suemasa, Nirasaki, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31111 (2013.01); H01L 21/31116 (2013.01); H01L 21/67069 (2013.01);
Abstract

A gas processing method is described. A workpiece is mounted on a platform in a chamber on which a silicon oxide film is formed on a surface of the workpiece; HF gas and a NHgas, as reaction gases, are discharged onto the workpiece on the platform from a plurality of gas discharge holes of a shower plate; and a treatment for causing a reaction between the reaction gases and the silicon oxide film on the surface of the workpiece is performed. Subsequently, the reaction product resulting from the treatment is heated and removed by decomposition, whereby etching is performed. The shower plate is divided into a plurality of regions in correspondence with the workpiece, and the gas discharge holes in one or more of the regions are blocked to control a distribution of at least one of the HF gas and the NHgas.


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