The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2016
Filed:
Mar. 14, 2016
Infineon Technologies Austria Ag, Villach, AT;
Franz Hirler, Isen, DE;
Roman Knoefler, Villach, AT;
Anton Mauder, Kolbermoor, DE;
Hans Weber, Bayerisch-Gmain, DE;
Joachim Weyers, Hoehenkirchen, DE;
Infineon Technologies Austria AG, Villach, AT;
Abstract
A wafer includes a semiconductor layer having a concentration of n-dopants. A first mask is formed on the wafer and has first openings in an active area of a semiconductor device and at least one second opening in a peripheral area of the device. The first openings define first zones in the semiconductor layer and each second opening defines a second zone in the layer. Donor ions are implanted through the first mask into the first and second zones. The first mask is replaced by a second mask which has third openings in the active area and at least one fourth opening in the peripheral area. Each fourth opening defines a fourth zone in the semiconductor layer which at least partially overlaps with the second zone. The third openings define third zones in the semiconductor layer. Acceptor ions are implanted through the second mask into the third and fourth zones.