The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 16, 2016

Filed:

Jan. 16, 2013
Applicants:

Taiwan Semiconductor Manufacturing Co., Ltd, Hsin-Chu, TW;

National Taiwan University, Taipei, TW;

Inventors:

Kuen-Yu Tsai, Taipei, TW;

Chun-Hung Liu, New Taipei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/20 (2006.01); G06F 17/18 (2006.01); H01J 37/00 (2006.01); G03F 1/70 (2012.01);
U.S. Cl.
CPC ...
G06F 17/18 (2013.01); G03F 7/705 (2013.01); G03F 7/70433 (2013.01); H01J 37/00 (2013.01); G03F 1/70 (2013.01);
Abstract

A method for establishing a parametric model of a semiconductor process is provided. A first intermediate result is generated according to layout data and a non-parametric model of the semiconductor process. A first response is obtained according to the first intermediate result. A specific mathematical function is selected from a plurality of mathematical functions, and the parametric model is obtained according to the specific mathematical function. A second intermediate result is generated according to the layout data and the parametric model. A second response is obtained according to the second intermediate result. It is determined whether the parametric model is an optimal model according to the first and second responses.


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