The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2016
Filed:
Aug. 30, 2012
Bernhard Jakoby, Linz, AT;
Ventsislav Lachiev, Gallneukirchen, AT;
Thomas Grille, Villach, AT;
Peter Irsigler, Obernberg/Inn, AT;
Ursula Hedenig, Villach, AT;
Sokratis Sgouridis, Annenheim, AT;
Thomas Krotscheck Ostermann, Koestenberg, AT;
Bernhard Jakoby, Linz, AT;
Ventsislav Lachiev, Gallneukirchen, AT;
Thomas Grille, Villach, AT;
Peter Irsigler, Obernberg/Inn, AT;
Ursula Hedenig, Villach, AT;
Sokratis Sgouridis, Annenheim, AT;
Thomas Krotscheck Ostermann, Koestenberg, AT;
Infineon Technologies AG, Neubiberg, DE;
Abstract
Some embodiments of the present disclosure relate to an infrared (IR) opto-electronic sensor having a silicon waveguide implemented on a single silicon integrated chip. The IR sensor has a semiconductor substrate having a silicon waveguide extends along a length between a radiation input conduit and a radiation output conduit. The radiation input conduit couples radiation into the silicon waveguide, while the radiation output conduit couples radiation out from the silicon waveguide. The silicon waveguide conveys the IR radiation from the radiation input conduit to the radiation output conduit at a single mode. As the radiation is conveyed by the silicon waveguide, an evanescent field is formed that extends outward from the silicon waveguide to interact with a sample positioned between the radiation input conduit and the radiation output conduit.