The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2016
Filed:
Feb. 08, 2012
Yu Yoshino, Moriyama, JP;
Kunihiko Koike, Moriyama, JP;
Manabu Saeda, Moriyama, JP;
Toshiki Manabe, Osaka, JP;
Yu Yoshino, Moriyama, JP;
Kunihiko Koike, Moriyama, JP;
Manabu Saeda, Moriyama, JP;
Toshiki Manabe, Osaka, JP;
IWATANI CORPORATION, Osaka-Shi, JP;
Abstract
Provided is a method for treating the inner surface of a chlorine trifluoride supply passage that enables reliable prevention of the reduction in the concentration of ClFin a reaction chamber during process operation. The method includes: integrally connecting a gas supply passage () and a gas discharge passage () to a processing chamber () of a processing apparatus in which chlorine trifluoride is used as an etching gas; and applying chlorine trifluoride gas having a concentration equal to or higher than the concentration of chlorine trifluoride gas supplied during etching process operation on inner surfaces of at least the processing chamber () and the gas supply passage () among the processing chamber (), the gas supply passage (), and the gas discharge passage (), which are integrally formed, to coat the inner surfaces of at least the processing chamber () and the gas supply passage () with a fluoride film.