The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2016
Filed:
Aug. 30, 2011
Yasunori Hioki, Nagaokakyo, JP;
Tomomichi Ichikawa, Nagaokakyo, JP;
Norihiro Yoshikawa, Nagaokakyo, JP;
Ichiro Nakamura, Nagaokakyo, JP;
Ichiro Nakaso, Nagaokakyo, JP;
Shinichi Kobayashi, Nagaokakyo, JP;
Tomoki Inakura, Nagaokakyo, JP;
Yasunori Hioki, Nagaokakyo, JP;
Tomomichi Ichikawa, Nagaokakyo, JP;
Norihiro Yoshikawa, Nagaokakyo, JP;
Ichiro Nakamura, Nagaokakyo, JP;
Ichiro Nakaso, Nagaokakyo, JP;
Shinichi Kobayashi, Nagaokakyo, JP;
Tomoki Inakura, Nagaokakyo, JP;
MURATA MANUFACTURING CO., LTD., Nagaokakyo-Shi, Kyoto-Fu, JP;
Abstract
To increase the heat resistance of a film capacitor, a cured article obtained by curing a mixed solution of a polyvinyl acetal having a hydroxyl group content of 10% to 38% by weight, the number of backbone carbon atoms of the polyvinyl acetal being 100 or more, and a polyisocyanate having an isocyanate content of 1% to 50% by weight is used as a dielectric resin films material arranged between first and second counter electrodes facing each other. At least the polyvinyl acetal is subjected to high-pressure homogenization in which a shearing force is applied such that a pressure applied to the polyvinyl acetal is 50 MPa or more when the material is passed through a path having a diameter of 0.125 mm and a length of 5 mm, so that the solubility is increased to allow a curing reaction to proceed uniformly. The cured article has a glass transition temperature of 130° C. or higher and a breakdown voltage of 350 V/μm or more.