The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 09, 2016

Filed:

Apr. 19, 2012
Applicants:

Yuan Gao, Cugnaux, FR;

Patrice Besse, Tournefeuille, FR;

Thierry Laplagne, Cugnaux, FR;

Inventors:

Yuan Gao, Cugnaux, FR;

Patrice Besse, Tournefeuille, FR;

Thierry Laplagne, Cugnaux, FR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02H 3/20 (2006.01); H02H 9/04 (2006.01); H02H 3/28 (2006.01); H03K 17/082 (2006.01); H03K 17/10 (2006.01);
U.S. Cl.
CPC ...
H02H 3/28 (2013.01); H03K 17/0822 (2013.01); H03K 17/102 (2013.01);
Abstract

A protection circuit and a gate driving circuitry. The protection circuit is for protecting a p-type back-to-back MOS switch. The circuit receives an input driving signal and provides a driving output signal to common gates of the p-type back-to-back MOS switch. The circuit comprises a driving signal insulation switch for disconnecting the common gate of the p-type back-to-back MOS switch from the received input driving signal when the voltage of the common gates is larger than the supply voltage of the circuit. The circuit further comprises a gate source coupling switch for coupling a voltage received at the common source of the p-type back-to-back MOS switch to the common gate if a received voltage at the common sources is larger than a reference voltage Vref.


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