The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2016
Filed:
Dec. 23, 2013
United Microelectronics Corp., Hsin-Chu, TW;
Yu-Chun Chang, Taichung, TW;
Ping-Chia Shih, Tainan, TW;
Chi-Cheng Huang, Kaohsiung, TW;
Kuo-Lung Li, Yunlin County, TW;
Kun-I Chou, Tainan, TW;
Chung-Che Huang, Tainan, TW;
Chia-Cheng Hsu, Tainan, TW;
Mu-Jia Liu, Tainan, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A method for fabricating a semiconductor device includes forming a patterned multi-layered dielectric film on a substrate; forming a patterned stack on the patterned multi-layered dielectric film so that an edge of the patterned multi-layered dielectric film is exposed from the patterned stack; forming a cover layer to cover a part of the substrate and expose the patterned stack and the exposed edge of the patterned multi-layered dielectric film; removing at least a part of the exposed edge of the patterned multi-layered dielectric film by using the cover layer and the patterned stack as an etching mask; and performing an ion implantation process by using the cover layer as an etching mask so as to form a doped region.